# Heterosynaptic Memtransistors Based on Switching Operation Mechanism Using Designed Organic/Inorganic Heterostructures for Neuromorphic Electronics

## TL;DR

This paper introduces a new type of memtransistor using organic and inorganic materials to mimic brain-like computing functions efficiently.

## Contribution

The study introduces a novel gate-pulse-tunable memtransistor design using TCTA/MoS2 heterostructures for neuromorphic electronics.

## Key findings

- Memtransistors with TCTA/MoS2 heterostructures show a switching ratio of 102 modulated by gate pulses.
- Non-volatile heterosynaptic behavior is achieved with time constants of 100 ms for potentiation and 60 ms for depression.
- The design enables reliable emulation of synaptic plasticity and neuromorphic functions.

## Abstract

Memtransistors using low‐dimensional semiconductors represent a promising gate‐tunable heterosynaptic architecture for neuromorphic computing. However, active layers of these devices have not yet been artificially designed or controlled. In this study, gate‐pulse‐tunable heterosynaptic neuromodulation is achieved using memtransistors with organic semiconductor tris(4‐carbazoyl‐9‐ylphenyl)amine (TCTA)/MoS2 heterostructures designed via energy‐band engineering and bottom‐contact architecture. Memristive switching is realized through distinctive low‐ and high‐conduction states with a switching ratio of 102, modulated by gate pulses. As the gate voltage (V
G) decreases from +30 to −30 V, the memristive hysteresis for the bottom contact TCTA/MoS2 FET without post‐treatment and an h‐BN insulating layer appears at V
G = −15 V and broadens with an increasing switching ratio. Intriguingly, as V
G becomes increasingly negative (V
G < −15 V), trap‐related space‐charge‐limited conduction becomes dominant. Non‐volatile heterosynaptic behavior is mimicked by drain pulses and modulated by gate‐pulse polarities. Applying gate‐pulse only, analogous responses are observed in synaptic modulation with time constants of 100 ms for potentiation and 60 ms for depression. The design of multi‐functional memory and realization of gate‐pulse‐tunable memtransistors using nanoscale TCTA/MoS2 can promote energy‐efficient, tunable, and reliable heterosynaptic neuromorphic electronics.

Heteroysynaptic memtransistors are fabricated using a combination of π‐conjugated organic semiconductor TCTA and TMDC MoS2 heterostructure with bottom‐contact architecture. Non‐volatile heterosynaptic and homosynaptic functions such as long‐term plasticity and spike‐timing‐dependent plasticity are emulated by drain and gate pulses based on conduction mechanism switching. Elaborately designed framework can offer reliability and reproducibility for artificial neuromorphic computing systems.