# Ion-pair pinning on perovskite quantum dots for high-efficiency air-processed light-emitting diodes with Rec. 2020 compliance

**Authors:** Yuhang Cui, Danlei Zhu, Jiawei Chen, Shuyue Dong, Yuanzhuang Cheng, Xiangyu Liu, Xinghua Yan, Zicong Jin, Lian Duan, Jian Xu, Dongxin Ma

PMC · DOI: 10.1038/s41377-026-02247-z · 2026-03-06

## TL;DR

A new method enables the production of efficient light-emitting diodes using perovskite quantum dots in normal air, reducing costs and improving scalability.

## Contribution

An ion-pair pinning strategy is introduced to stabilize perovskite quantum dots during air processing.

## Key findings

- The method achieves high external quantum efficiency of 21.3% in air-processed QLEDs.
- The QLEDs meet Rec. 2020 color standards with a peak luminance of over 3 × 10⁴ cd m⁻².
- The strategy eliminates the need for inert gas during fabrication.

## Abstract

Perovskite quantum dot light-emitting diodes (QLEDs) offer superior efficiency and high colour purity, making them promising candidates for next-generation lighting and display technologies. However, fabricating the emissive perovskite quantum dot (QD) layer typically requires a protective atmosphere due to its air sensitivity, thereby increasing production costs and limiting industrial scalability. Here, we propose an ion-pair pinning strategy by using tetraalkylammonium triflate (NR4OTf) to enable ambient-air processing of formamidinium lead bromide (FAPbBr3) QD films. The trifluoromethanesulfonic acid anions (OTf−) hydrogen bond with FA+, inhibiting its detachment and passivating the uncoordinated Pb2+, while the tetraalkylammonium cations (NR4+) serve as X-type ligands to inhibit deprotonation. This dual ion-pair pinning effect stabilises the QD lattice and provides surface resistance to moisture and oxygen, thereby improving the uniformity, stability, and optoelectronic performance of air-processed QD films. The as-constructed air-processed QLED achieves a high external quantum efficiency (EQE) of 21.3% and a peak luminance of over 3 × 104 cd m−2 at 529 nm with Rec. 2020 compliance (EQE of 23.9% and luminance of over 8 × 104 cd m−2 for the N2-processed QLED). Our work eliminates the reliance on inert gas protection in perovskite QLED fabrication, laying a foundation for their low-cost, large-scale manufacturing and expansion into diversified applications.

An ion-pair pinning strategy is proposed for air-processed FAPbBr3 quantum dot light-emitting diodes with Rec. 2020 compliance, eliminating inert gas dependence for low-cost scalable manufacturing.

## Linked entities

- **Chemicals:** trifluoromethanesulfonic acid (PubChem CID 62406)

## Full-text entities

- **Genes:** RBPJP4 (RBPJ pseudogene 4) [NCBI Gene 58163] {aka K7, RBPSUHP4}
- **Chemicals:** Perovskite (MESH:C059910), acetonitrile (MESH:C032159), trifluoromethanesulfonic acid (MESH:C012077), carbon (MESH:D002244), acetone (MESH:D000096), lead bromide (MESH:C032721), N (MESH:D009584), OTAm (MESH:C008699), tetrabutylammonium (MESH:C009405), poly(styrenesulfonate) (MESH:C003321), O (MESH:D010100), n-octane (MESH:C026728), Br (MESH:D001966), superoxide (MESH:D013481), EL (-), Si (MESH:D012825), Al (MESH:D000535), S (MESH:D013455), ITO (MESH:C109984), ethyl alcohol (MESH:D000431), chlorobenzene (MESH:C031294), poly(3,4-ethylenedioxythiophene) (MESH:C121383), FA (MESH:D005492), halogen (MESH:D006219), Pb (MESH:D007854), OA (MESH:D019301), MeS (MESH:C004550), copper (MESH:D003300), hydrogen (MESH:D006859), Chloroform (MESH:D002725), methanesulfonate (MESH:C045880), tetraethylammonium (MESH:D019789), DMF (MESH:D004126), PEDOT: PSS (MESH:C533756), Ammonium bromide (MESH:C051470), ZnO (MESH:D015034), H2O (MESH:D014867), MoOx (MESH:C000723919), LiF (MESH:C027651)

## Figures

7 figures with captions in the complete paper: https://tomesphere.com/paper/PMC12966369/full.md

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Source: https://tomesphere.com/paper/PMC12966369