Synergistically Optimizing the Thermoelectric Performance of n‑Type SnS through an Integrated Systematic Approach
Sidharth Duraisamy, Yang-Yuan Chen, Kuei-Hsien Chen, Maw-Kuen Wu, G. Peramaiyan, V. K. Ranganayakulu, Muluken Biadgelegn Wollele, Min-Nan Ou
TL;DR
Researchers improved the thermoelectric performance of n-type SnS by addressing challenges related to native Sn vacancies and enhancing conductivity.
Contribution
A novel integrated approach combining sulfur vacancies, Cl– and Se2– substitutions, and SnCl2 compensation to optimize n-type SnS thermoelectric performance.
Findings
n-type SnS1−δ samples with sulfur vacancies and Cl–/Se2– substitutions showed enhanced thermoelectric performance.
SnS0.455Se0.45Cl0.02 achieved a ZT max of ≈0.7 at 823 K, the highest reported for n-type SnS.
Incorporating SnCl2 lowered thermal conductivity and improved power factor.
Abstract
Tin(II) sulfide (SnS) is a promising p-type semiconductor known for its high thermoelectric performance and eco-friendly properties, offering a viable alternative to group IV–VI compounds. However, achieving n-type conductivity in SnS has been challenging due to the propensity for native Sn vacancies. This study addresses this challenge by synthesizing polycrystalline n-type SnS1−δ (δ = 0.05 and 0.075) samples through solid-state reaction. By introducing sulfur vacancies to counteract Sn vacancies, followed by aliovalent (Cl–) and isoelectronic (Se2–) substitutions, we significantly enhance the thermoelectric performance of n-type SnS. Chlorine doping further improves electrical conductivity, with SnS0.455Se0.45Cl0.02 showing superior performance. Additionally, incorporating 0.03 mol % SnCl2 in SnS0.475Se0.45 compensates for intrinsic Sn vacancies, optimizing the power factor and…
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Taxonomy
TopicsAdvanced Thermoelectric Materials and Devices · Chalcogenide Semiconductor Thin Films · Perovskite Materials and Applications