Advances in the synthesis and characterization of phosphorene for bandgap tailoring – a comprehensive review
Md. Helal Hossain, Mohammad Asaduzzaman Chowdhury, Md. Touhiduzzaman
TL;DR
This review discusses the synthesis and properties of phosphorene, a 2D material with a tunable bandgap, highlighting its potential for electronic and optoelectronic applications.
Contribution
The paper provides a comprehensive review of phosphorene's structural, optical, and electronic properties, emphasizing its tunable bandgap and synthesis methods.
Findings
Phosphorene's bandgap increases from 0.33 eV in bulk to 1.88 eV in bilayers.
Optical transitions in phosphorene range from 2.0 eV to 3.23 eV, showing unique optoelectronic behavior.
Characterization techniques like AFM, SEM, and TEM confirm the successful exfoliation and uniformity of phosphorene nanosheets.
Abstract
Phosphorene is a two-dimensional (2D) material obtained from black phosphorus and has attracted considerable attention for its outstanding electronic properties, such as tunable bandgap and high carrier mobility. This review presents the structural and morphological study of direct bandgap phosphorene by atomic force microscopy (AFM), scanning electron microscopy (SEM), and transmission electron microscopy (TEM), which verified the successful exfoliation and uniformity of the nanosheets. Also, the crystalline studies and optical properties investigated through Raman spectroscopy, X-ray diffraction (XRD) and ultraviolet-visible (UV-Vis) spectroscopy have been presented. Photoluminescence (PL) spectroscopy can measure the bandgap energy, demonstrating tunability which is dependent on the number of layers. The increase from 0.33 eV in the bulk to 1.88 eV in bilayers showcases phosphorene's…
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Taxonomy
Topics2D Materials and Applications · Nanowire Synthesis and Applications · Ga2O3 and related materials