Spectroscopic Evaluation of AlN/n-Si MIS Structures through Frequency-Driven Dielectric Characterization
Abdullah Karaca, Dilber Esra Yıldız, Raziye Ertuğrul Uyar, Adem Tataroğlu
TL;DR
This paper studies the electrical and dielectric properties of a Au/Ti/AlN/n-Si structure under varying frequencies and temperatures.
Contribution
The study introduces a detailed frequency-driven dielectric characterization framework for AlN/n-Si MIS structures.
Findings
Strong dispersion effects were observed at low frequencies and temperatures due to interfacial trap states and dipolar relaxation.
Negative capacitance behavior was detected under reverse bias at low frequencies.
Dielectric parameters showed thermally activated and frequency-sensitive behavior.
Abstract
This study presents a comprehensive spectroscopic and impedance-based analysis of a Au/Ti/AlN/n-Si metal–insulator–semiconductor (MIS) heterostructure, focusing on its frequency- and temperature-dependent electrical and dielectric behavior. The AlN interlayer, synthesized via hydride vapor-phase epitaxy (HVPE), was electrically characterized through admittance spectroscopy across a wide temperature range (100–350 K) and multiple frequencies (100, 500, and 1 MHz). Capacitance–voltage (C–V) and conductance–voltage (G/ω–V) measurements revealed strong dispersion effects, particularly at low frequencies and temperatures, where interfacial trap states and dipolar relaxation dominate the response. A negative capacitance behavior was observed under a reverse bias at low frequencies. Series resistance (R s) analysis confirmed a transition from trap-limited to bulk-controlled conduction with…
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Taxonomy
TopicsSemiconductor materials and interfaces · GaN-based semiconductor devices and materials · Acoustic Wave Resonator Technologies