# Direct Probing of Trap Dynamics in β‐Ga2O3 Schottky Barrier Diodes Using Single‐Voltage‐Pulse Characterization

## TL;DR

A new single-pulse method reveals how trap states affect the performance of gallium oxide diodes, providing insights into electron capture and thermal behavior.

## Contribution

A single-pulse characterization method is introduced to directly probe trap dynamics in β-Ga2O3 Schottky barrier diodes.

## Key findings

- Traps in the neutral region progressively capture electrons, causing current decay during constant-voltage pulses.
- A trap density of ≈5×10¹⁴ cm⁻² was determined near the Schottky junction.
- Carrier capture time constant is ≈30 µs at 2 V forward bias, with a trap activation energy of ≈0.16 eV.

## Abstract

Gallium oxide (β‐Ga2O3) is a promising ultrawide‐bandgap semiconductor for next‐generation power electronics, but its performance is strongly limited by trap states that capture carriers. In this study, a single‐pulse characterization method is presented to directly probe trap dynamics in β‐Ga2O3 Schottky barrier diodes (SBDs). Transient current responses are systematically investigated under varying pulse widths, rise and fall times, amplitudes, and temperatures. The results reveal that traps in the neutral region progressively participate in electron capture, resulting in current decay during the constant‐voltage phase. Additionally, a delayed trap response produces asymmetry between the ramp‐up and ramp‐down transients. Analysis of the current decay yielded a trap density of ≈5×1014 cm−2, representing the total trap density near the Schottky junction. Exponential fitting provides a carrier capture time constant of ≈ 30 µs at a forward bias of 2 V, consistent with the onset of trap‐induced current degradation. Temperature‐dependent measurements indicate that carrier capture is suppressed at elevated temperatures, resulting in a trap activation energy of ≈0.16 eV. These findings demonstrate that the single‐pulse method offers a straightforward and effective approach for evaluating trap states under practical operating conditions in β‐Ga2O3 devices.

A single‐pulse approach uncovers trap dynamics in β‐Ga2O3 Schottky barrier diodes. Transient current profiling reveals rapid electron capture, delayed trap filling, and clear thermal effects. Extracted trap densities, capture time constants, and activation energies indicate that this simple pulse technique enables effective evaluation of trap states under realistic device operation conditions.