# Processing Characteristics of Ultra-Precision Cutting of 4H-SiC Wafers by Dicing Blade

**Authors:** Yufang Wang, Zhixiong Li, Fengjun Chen, Zhiqiang Xu

PMC · DOI: 10.3390/mi17020187 · Micromachines · 2026-01-30

## TL;DR

This study explores how to reduce chipping defects when cutting 4H-SiC wafers using a dicing blade by analyzing process parameters and material removal mechanisms.

## Contribution

The study provides new insights into chipping formation and material removal mechanisms during the dicing of 4H-SiC wafers.

## Key findings

- Spindle current measurements effectively reflect changes in grinding force during cutting.
- Optimal process parameters were identified to minimize chipping defects in 4H-SiC wafers.
- Analysis of cutting morphology revealed mechanisms of chipping and material removal.

## Abstract

Dicing is an important process in the packaging segment of the semiconductor manufacturing process, and due to the high hardness and brittleness of 4H-SiC wafers, they are prone to crack propagation and severe chipping during the dicing process. To reduce chipping defects, this study investigates the effects of key process parameters on the chipping behavior of 4H-SiC wafers, as well as the associated chipping formation and material removal mechanisms during dicing. Firstly, a spindle current measurement scheme was designed to indirectly reflect changes in grinding force during the cutting process, and the change in the cutting process in a single pass was analyzed. Secondly, experiments controlling single-factor variables were designed to explore the influence of laws of process parameters, including depth of cut, spindle speed, feed speed, and the dicing blade parameter, abrasive grain size, on the quality of chipping, and the optimal process parameters were obtained. Thirdly, the morphology of the 4H-SiC cutting contact arc area, front–back chipping, and sidewalls was analyzed in order to investigate the chipping formation and material removal mechanism. This study contributes to a fundamental understanding of material removal mechanisms during the cutting of 4H-SiC wafers and other advanced semiconductor materials and provides guidance for optimizing cutting process parameters.

## Full-text entities

- **Diseases:** brittle fracture (MESH:D010013), injury to (MESH:D014947), Fracture (MESH:D050723)
- **Chemicals:** diamond (MESH:D018130), Ge (MESH:D005857), Sn (MESH:D014001), GaN (MESH:C050366), water (MESH:D014867), Fe (MESH:D007501), nickel (MESH:D009532), metal (MESH:D008670), SiC (MESH:C022088), Co (MESH:D003035), InP. (MESH:C090882), aluminum (MESH:D000535), Si (MESH:D012825), 4H-SiC (-), GaAs (MESH:C043055)
- **Species:** Homo sapiens (human, species) [taxon 9606]

## Full text

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## Figures

5 figures with captions in the complete paper: https://tomesphere.com/paper/PMC12943408/full.md

## References

33 references — full list in the complete paper: https://tomesphere.com/paper/PMC12943408/full.md

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Source: https://tomesphere.com/paper/PMC12943408