# A High-Sensitivity MEMS Piezoresistive Pressure Sensor for Intracranial Pressure Monitoring

## TL;DR

This paper introduces a highly sensitive pressure sensor for monitoring intracranial pressure, which could improve diagnosis and treatment of neurological disorders.

## Contribution

A novel beam-membrane-island MEMS sensor structure is proposed, offering higher sensitivity and linearity for ICP monitoring.

## Key findings

- The sensor achieved a sensitivity of 1.59 mV/V//kPa and a nonlinearity of −0.22% F.S.
- The sensor can detect pressure with centimeter water column resolution, suitable for ICP monitoring.

## Abstract

Accurate monitoring of intracranial pressure (ICP) is critical for the diagnosis and management of neurological disorders. Although various ICP sensors have been developed, their sensitivity is often limited, restricting their ability to detect subtle pressure variations. Therefore, there is a pressing need to develop ICP sensors with enhanced sensitivity to improve measurement accuracy and patient outcomes. In this paper, a highly sensitive and precise pressure sensor for intracranial pressure (ICP) monitoring was proposed. Theoretically, the beam-membrane-island structure was introduced and optimized to improve sensitivity and linearity compared to a flat membrane structure. The notches etched at beam end were designed for further improving sensitivity. Experimentally, the designed sensor achieved a sensitivity of 1.59 mV/V//kPa and a nonlinearity of −0.22% F.S. Additionally, the sensor can detect pressure with centimeter water column (cm H2O) resolution, making it suitable for ICP monitoring. This technology holds broad application prospects in the field of medical devices.