# Structure-Dependent Parameter Trade-Off Optimization on RonCoff and Power Compression of AlGaN/GaN HEMTs for RF Switch Application

## TL;DR

This paper introduces a new method to optimize GaN transistors for RF switches by balancing key performance parameters.

## Contribution

The novel contribution is a structure-dependent parameter trade-off optimization method for GaN HEMTs in RF switch applications.

## Key findings

- Increasing gate foot length and using high work function metal reduce RonCoff but affect power compression.
- Adjusting source-drain spacing and gate width impacts switching performance dynamically.
- Application-specific design rules are developed for high-frequency and high-power scenarios.

## Abstract

This paper presents, for the first time, the structure-dependent parameter trade-off optimization on figure-of-merit (RonCoff) and power compression of AlGaN/GaN high electron mobility transistors (HEMTs) for radio frequency (RF) switch applications. For GaN HEMTs operating in switching mode, it was demonstrated that RonCoff can be effectively reduced by increasing the gate foot length (Lg_foot), decreasing the gate cap length (Lg_cap), reducing the gate bias resistance (rg), and adopting a high work function metal for the gate electrode (Φg). However, these parameter adjustments affect power compression and RonCoff in opposing manners. This paper also presents supplementary research on the effects of source-drain spacing (Lds) and gate width (Wg) on switching performance. This research achieves a dynamic balancing method for structural parameters, delivering application-specific design rules for different scenarios ranging from high-frequency to high-power applications.