Review of Prognosis Approaches Applied to Power SiC MOSFETs for Health State and Remaining Useful Life Prediction
Sanjiv Kumar, Bruno Allard, Malorie Hologne-Carpentier, Guy Clerc, François Auger

TL;DR
This paper reviews prognosis methods for predicting the health and lifespan of SiC MOSFETs, highlighting the use of data-based approaches and challenges in validation and uncertainty estimation.
Contribution
The paper provides a comprehensive review of prognosis tools for SiC MOSFETs, emphasizing data-based methods and their limitations.
Findings
Most studies use data-based methods, particularly neural networks, for SiC MOSFET prognosis.
Out-of-sample validation and uncertainty estimation are rarely addressed in the literature.
Degradation indicator trends significantly affect the performance of data-based prognosis methods.
Abstract
The use of Silicon Carbide (SiC) MOSFETs significantly improves converter performance by increasing efficiency and reducing costs, to the detriment of electro-magnetic emission and reliability. Implementing a predictive maintenance strategy based on a prognosis tool can mitigate this limitation. This literature review offers a methodological synthesis of prognosis design tools for SiC MOSFETs, while also encompassing studies on IGBTs and silicon-based power MOSFETs where these approaches are transferable. The analysis focuses on wear-out prognosis under nominal operating conditions of standard package device, excluding environmental constraints. Articles published up to 2025 were identified in the OpenAlex database using a keyword-based search and manually filtered according to the study scope. Most reviewed works rely on Data-Based prognosis methods, mostly based on neural networks,…
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Taxonomy
TopicsSilicon Carbide Semiconductor Technologies · Machine Fault Diagnosis Techniques · Power System Reliability and Maintenance
