# Moiré-Induced Electronic Reconstruction in van der Waals Heterobilayer PtSe2/PtTe2

## TL;DR

This paper studies how the electronic properties of a layered material system change due to interlayer interactions and moiré effects.

## Contribution

The study reveals electronic hybridization and charge transfer in PtSe2/PtTe2 heterostructures governed by moiré characteristics.

## Key findings

- PtSe2/PtTe2 heterostructures transition from Dirac semimetals to semiconductors in few-layer form.
- Electronic hybridization and flat-band features arise from interlayer coupling and spin–orbit coupling.
- Metallic behavior occurs at MM sites while semiconducting behavior is observed at MX and XX sites.

## Abstract

van der Waals heterostructures composed of a few atomic
layers
have attracted significant attention in the condensed matter physics
community. Although interlayer bonding is weak, effects such as moiré
modulation, charge redistribution, and electronic hybridization can
substantially modify the band structure and interlayer coupling. In
this work, we investigate heterostructures composed of few-layer PtSe2 and PtTe2 by using first-principles calculations
implemented within density functional theory (DFT) and angle-resolved
photoemission spectroscopy (ARPES). While both materials are Dirac
semimetals in the bulk form, they undergo a transition to semiconducting
states in the few-layer limit. These heterostructures allow systematic
examination of how dimensional confinement and interfacial interactions
influence band structure and interlayer coupling. Our combined ARPES
measurements and DFT calculations indicate the presence of electronic
hybridization at the interface. The interlayer coupling in PtSe2/PtTe2 is associated with flat-band features and
valence-band splitting induced by both inversion symmetry breaking
and spin–orbit coupling. Furthermore, the local density of
states indicates metallic behavior at the MM site while it remains
semiconducting at MX and XX sites with the band gap of 0.40 and 0.25
eV, respectively. Further analysis shows that the electronic hybridization
and charge transfer between PtSe2 and PtTe2 are
sensitive to the interlayer distance, which is consistent with moiré
characteristics. These results highlight how interfacial interactions
govern the electronic properties of vdW heterostructures.