# Large-scale analogue quantum simulation using atom dot arrays

**Authors:** M. B. Donnelly, Y. Chung, R. Garreis, S. Plugge, D. Pye, M. Kiczynski, J. Támara-Isaza, M. M. Munia, S. Sutherland, B. Voisin, L. Kranz, Y. L. Hsueh, A. M. Saffat-Ee Huq, C. R. Myers, R. Rahman, J. G. Keizer, S. K. Gorman, M. Y. Simmons

PMC · DOI: 10.1038/s41586-025-10053-7 · Nature · 2026-02-04

## TL;DR

A new quantum simulation platform using atom-based quantum dots enables large-scale simulation of strongly interacting quantum materials.

## Contribution

A precision-engineered platform for simulating strongly interacting fermionic systems at low temperatures is introduced.

## Key findings

- A metal–insulator transition was observed on a 2D square lattice of atom-based quantum dots.
- Independent control of on-site interaction U and tunnelling t was demonstrated.
- Magneto-transport measurements indicated an insulating state driven by Mott–Hubbard/Anderson physics.

## Abstract

In pursuit of a practical quantum advantage1, analogue quantum systems provide an invaluable way to simulate the physics of quantum materials2–4, quantum systems out of equilibrium5,6 or interaction-induced localization7. Notable recent progress to realize such systems has been achieved in ultracold atoms8–12, superconducting circuits13–15 and twisted van der Waals materials16–19. However, so far, these platforms have struggled to simulate large-scale strongly interacting fermionic systems at low temperatures, at which electronic correlations dominate materials properties and numerical simulations remain restricted in accuracy and scope20,21. Here we demonstrate the realization of a new platform consisting of large-scale 2D arrays of sub-nanometre precision-engineered atom-based quantum dots (15,000 sites) to simulate strongly interacting, low-temperature physics. By observing a metal–insulator (MI) transition on a 2D square lattice of atom-based quantum dots, we demonstrate independent and precise control of the on-site interaction U and tunnelling t. Magneto-transport measurements further indicate the formation of an insulating state driven by Mott–Hubbard/Anderson physics and promising signatures of correlated electron physics. These precision-engineered analogue quantum simulators provide a unique platform to simulate quantum materials on arbitrary 2D lattices and to explore many unanswered questions in the formation of quantum magnetism, interacting topological quantum matter and unconventional superconductivity.

A new platform comprising large-scale 2D arrays of quantum dots patterned with sub-nanometre precision, with each quantum dot defined by tens of phosphorus atoms doped into silicon, allows for analogue simulation of quantum materials on arbitrary lattices.

## Full-text entities

- **Diseases:** MI (MESH:D013651)
- **Chemicals:** phosphorus (MESH:D010758), oxygen (MESH:D010100), copper (MESH:D003300), Pd (MESH:D010165), Ti (MESH:D014025), Silicon (MESH:D012825), Lieb (-), hydrogen (MESH:D006859), phosphine (MESH:C044646)

## Full text

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## Figures

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## References

2 references — full list in the complete paper: https://tomesphere.com/paper/PMC12916296/full.md

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Source: https://tomesphere.com/paper/PMC12916296