Heterointerface‐Functionalized Photoelectric Response of Metal‐Oxide Schottky Photodiode for Intelligent Fire Detection
Yuyang Cai, Zhiwei Zheng, Zhiwu Zhong, Yuhan Zhang, Tengyan Huang, Yucheng Cao, Dawei Zheng, Yen Hung Lin, Fion Sze Yan Yeung, Kuan‐Chang Chang, Jie Chen, Hoi Sing Kwok, Lei LU, Yufeng Jin

TL;DR
A new photodiode design improves fire detection by combining high UV sensitivity with machine learning for accurate material identification.
Contribution
A heterointerface-functionalized Schottky photodiode enables high-performance UV detection and intelligent material recognition.
Findings
In2O3 HF-SPDs achieve 27.75 A W−1 responsivity and 2.036 × 1013 Jones detectivity under 360-nm UV light.
Integration with an MLP neural network enables 99.94% accuracy in identifying burning materials.
The device exhibits bias-tunable photoelectrical characteristics and unique wavelength selectivity.
Abstract
Ultraviolet photodetectors (UV‐PDs) based on wide‐bandgap oxide semiconductors (OSs) hold broad prospects in scientific, civil, and especially fire alarm applications. However, the hotly pursued flexible and hetero‐integration capabilities are hindered by the high processing temperature of mainstream Ga2O3 UV‐PDs, while the selective UV detection capability of low‐temperature OS (LT‐OS) is undermined by the pronounced contradictory effects of abundant native defects on electric and optoelectrical properties. Herein, a heterointerface‐functionalized Schottky photodiode (HF‐SPD) is proposed to realize high‐performance LT‐OS UV‐PD. Due to the sophistically modulated Schottky contact and defect distribution, ultralow dark current and remarkable photoresponse are simultaneously achieved in In2O3 HF‐SPDs. Under the typical 360‐nm UV illumination, the responsivity (R) and detectivity (D *)…
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Taxonomy
TopicsGa2O3 and related materials · Gas Sensing Nanomaterials and Sensors · Transition Metal Oxide Nanomaterials
