Two-Component Anomalous Hall and Nernst Effects in Anisotropic Fe4– x Ge x N Thin Films
Robin K. Paul, Jakub Vít, Petr Levinský, Jiří Hejtmánek, Ondřej Kaman, Mariia Pashchenko, Lenka Kubíčková, Kyo-Hoon Ahn, Markéta Jarošová, Joris More Chevalier, Stanislav Cichoň, Tomáš Kmječ, Jaroslav Kohout, Marcus Hans, Stanislav Mráz, Jochen M. Schneider
TL;DR
This study explores how adding germanium to iron nitride thin films affects their magnetic and electrical properties, revealing new behaviors in Hall and Nernst effects.
Contribution
The paper identifies a two-component behavior in Hall and Nernst effects due to crystallographic orientation and magnetocrystalline anisotropy in Fe4–xGexN films.
Findings
Ge occupies the 4b site in tetragonal Fe4–xGexN films for x > 0.35.
Tetragonal samples show two-component hysteresis loops in Hall and Nernst effects due to coexisting crystallographic orientations.
The maximum ANE is 0.9 μV/K for x = 0 at room temperature and −0.85 μV/K for x = 1 at 50 K.
Abstract
A series of thin films Fe4–x Ge x N (x = 0 – 1) were fabricated onto MgO substrates by magnetron sputtering with the aim of studying the possible enhancement of the anomalous Nernst effect (ANE), envisaged based on density functional theory (DFT) calculations. The Nernst and Hall effects of the series were systematically analyzed, complemented with resistivity, magnetic, electron microscopy, and Mössbauer experiments, and DFT calculations including elastic properties. The Fe4N phase crystallizes in the cubic symmetry with Pm3̅m space group, whereas a small tetragonal distortion is realized in Fe4–x Ge x N films for x > 0.35. From the comparison of the experimental isomer shift with DFT calculations, we conclude that Ge occupies the 4b site in the tetragonal I4/mcm structure. The ferromagnetic Curie temperature decreases rapidly from ∼750 K for x = 0 to ∼100 K for x = 1. The tetragonal…
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Taxonomy
TopicsMagnetic properties of thin films · Magnetic Properties and Applications · Semiconductor materials and interfaces