# Effective control and probe of Néel order in polycrystalline NiO films: a combined approach to study antiferromagnets

**Authors:** Chun-Chieh Hsu, Yu-Chen Lin, I-Yu Cheng, Shuan-Cheng Mai, Danru Qu, Alexander J. Grutter, Margaret Kane, Yuri Suzuki, Yu-Lon Lin, Chao-Yao Yang

PMC · DOI: 10.1038/s41598-026-37152-3 · Scientific Reports · 2026-01-23

## TL;DR

Researchers developed a method to control and detect Néel order in antiferromagnetic materials using spin Hall magnetoresistance and field-cooling, enabling scalable device design.

## Contribution

A spin-current-free method to control Néel order in polycrystalline antiferromagnets using field-cooling and SHMR readout is introduced.

## Key findings

- SHMR can detect Néel temperature and monitor spin-flop transitions in polycrystalline NiO films.
- Field-cooling enables non-volatile control of Néel order without adjacent heavy metals.
- The combined FC and SHMR technique provides a scalable platform for AFM device design.

## Abstract

Antiferromagnetic (AFM) materials are promising for next-generation spintronic applications, however, practical implementation remains challenging due to difficulties in controlling the Néel order and the lack of sensitive, device-compatible readout techniques. In this work, we demonstrate spin Hall magnetoresistance (SHMR) as an effective and versatile approach for probing Néel order, even in polycrystalline AFM films. Using NiO/Pt and LaNiO3/Pt bilayers as model systems, we show that SHMR measurements can detect the Néel temperature (TN), monitor spin-flop transition, and reveal field-induced orientation of the Néel order. Crucially, we establish that the control of Néel order with non-volatility is effective when initiated from the “soft” AFM phase at elevated temperature (380 K) via field-cooling (FC), enabling robust alignment of Néel order without the need for adjacent heavy metals as spin current sources. This spin-current-free control greatly expands the flexibility and scalability of AFM device design, especially in the form of polycrystalline microstructure. The results highlight the combined FC and SHMR technique as a powerful and flexible platform for both manipulation and sensitive readout of AFM states, providing a reliable basis for the design and characterization of a broad class of AFM materials and devices.

The online version contains supplementary material available at 10.1038/s41598-026-37152-3.

## Full-text entities

- **Chemicals:** NiO (MESH:C028007)

## Full text

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## Figures

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Source: https://tomesphere.com/paper/PMC12901245