# Simulation and Optimization of Ballistic-Transport-Induced Avalanche Effects in Two-Dimensional Materials

## TL;DR

This paper introduces a simulation framework for studying and optimizing avalanche effects in two-dimensional materials for low-power photodetectors.

## Contribution

The first systematic simulation of ballistic-transport-induced avalanche effects in two-dimensional materials is presented.

## Key findings

- Ballistic avalanche features like low threshold voltage and high gain were successfully simulated.
- Simulation results align well with experimental data.
- Design parameters' impact on avalanche behavior was analyzed to guide device optimization.

## Abstract

This study, for the first time, investigates and simulates ballistic-transport-induced avalanche behavior in two-dimensional materials. Using a technology computer-aided design simulation platform, a device model for ballistic avalanche transport is systematically established. By accurately calibrating the material parameters of two-dimensional materials and selecting appropriate physical models, the key features of the ballistic avalanche effect are successfully reproduced, including low threshold voltage and high gain. The simulation results show good agreement with experimental data. Furthermore, mechanism-based analysis is performed to clarify the influence of critical design parameters on the avalanche threshold and multiplication gain. Finally, based on the same physical models and mechanistic understanding, the operational paradigm and performance of ballistic-transport avalanche photodetectors based on two-dimensional materials are predicted. This work provides a reliable theoretical foundation and a robust simulation framework for the optimized design of high-performance and low-power avalanche photon devices.