# Proximity-Assisted Synthesis of Large Area MoS2 on Different Target Substrates by Chemical Vapor Deposition Using a Mo Nanofilm Substrate

## TL;DR

This paper introduces a new CVD method to grow high-quality, large-area MoS2 films on various substrates using a Mo nanofilm.

## Contribution

A proximity-assisted CVD method for scalable, high-quality MoS2 synthesis using Mo nanofilm substrates.

## Key findings

- Millimeter-scale continuous MoS2 growth was achieved using proximity CVD.
- High-quality MoS2 films showed low defect density and excellent optical properties.
- Raman and photoluminescence analyses confirmed the crystalline and optical quality of the films.

## Abstract

Despite efforts to produce scalable, substrate-independent, low-defect-density, and high-quality MoS2, this continues to be a critical challenge for industrial-scale applications. This work aims to present a chemical vapor deposition (CVD) method for growing high-quality and potentially large-area mono- to few-layer MoS2 films via proximity between the Mo nanofilm substrate and the target substrates. By using stoichiometry-guided knowledge of Mo-S and Mo-O-S phase diagrams, Mo nanofilms are oxidized and then sulfurized under optimized conditions to grow high-quality, millimeter-scale mono- to few-layer MoS2 films in proximity to the target substrate. We have achieved millimeter-scale continuous growth of MoS2 revealed via optical microscopy. Two-dimensional Raman maps of Full Width at Half Maximum show high-quality growth, and photoluminescence-based B/A exciton amplitude ratio shows high crystalline and optical quality with low defect density.