# Filtered Cathodic Vacuum Arc Deposition for Inkjet-Printed OLED Encapsulation

**Authors:** Zhuo Gao, Songju Li, Lei Wang, Lin Chen, Xianwen Sun, Dong Fu

PMC · DOI: 10.3390/ma19030638 · Materials · 2026-02-06

## TL;DR

This paper introduces a fast and stable FCVA method for encapsulating OLEDs, improving their performance and durability compared to traditional techniques.

## Contribution

The novel use of FCVA for high-rate Al2O3 deposition in OLED encapsulation, achieving superior barrier properties and device reliability.

## Key findings

- FCVA-Al2O3 achieved a deposition rate of 15 nm/min, much faster than conventional ALD.
- The hybrid TFE structure showed excellent water vapor barrier properties (WVTR of 1.2 × 10−4 g/m2/day).
- OLED devices with FCVA-Al2O3 encapsulation lasted 300 h under harsh conditions, nearly double the lifetime without it.

## Abstract

To improve the low deposition rate of atomic layer deposition (ALD), we introduced filtered cathodic vacuum arc (FCVA) technology for the high-rate deposition of Al2O3 films. The FCVA-Al2O3 process achieved a deposition rate of 15 nm/min, which is approximately an order of magnitude higher than that of conventional ALD. This process does not involve hydrogen, preventing hydrogen ion penetration and thereby ensuring the high stability of the oxide TFT backplane. FCVA-Al2O3 films were integrated with inkjet-printed (IJP) organic layers to form a hybrid thin-film encapsulation (TFE) structure for OLEDs. The resulting laminated encapsulation exhibited excellent water vapor barrier properties (WVTR, Water Vapor Transmission Rate of 1.2 × 10−4 g/m2/day), demonstrating the great potential of FCVA for packaging high-throughput and high-performance flexible electronics. In addition to evaluating barrier properties (surface roughness, residual stress, and WVTR) to assess the suitability of TFE, the impact of FCVA technology was assessed via oxide thin-film transistor (TFT) electrical performance and OLED device reliability tests. The electrical properties of oxide TFTs show no significant degradation post-encapsulation, while OLED performance, despite a slight increase in current efficiency, remains effectively unchanged. Additionally, the lifetime of OLED devices reached 300 h under accelerated aging conditions (85 °C, 85% relative humidity), which is nearly twice that of devices without FCVA-Al2O3 encapsulation.

## Linked entities

- **Chemicals:** Al2O3 (PubChem CID 9989226)

## Full-text entities

- **Chemicals:** Water (MESH:D014867), hydrogen (MESH:D006859), oxide (MESH:D010087), Al2O3 (MESH:D000537), FCVA-Al2O3 (-)

## Full text

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## Figures

21 figures with captions in the complete paper: https://tomesphere.com/paper/PMC12898116/full.md

## References

38 references — full list in the complete paper: https://tomesphere.com/paper/PMC12898116/full.md

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Source: https://tomesphere.com/paper/PMC12898116