Impact of variations in ALD procedure on nanomorphology, protecting properties and chemical stability of thin TiO2 films
Hana Krýsová, Tomáš Imrich, Hana Tarábková, Pavel Janda, Josef Krýsa
TL;DR
This paper studies how different ALD temperatures affect the structure and performance of TiO2 thin films, showing that low-temperature films improve after annealing while high-temperature films are initially more efficient.
Contribution
The study reveals how ALD temperature and annealing influence TiO2 film properties and their photoelectrochemical performance.
Findings
Low-temperature ALD TiO2 films become anatase and more efficient after annealing.
High-temperature ALD TiO2 films are initially more photoelectrochemically efficient due to Ti3+ self-doping.
TiO2 films degrade in acidic but not in alkaline environments.
Abstract
Thin TiO2 films were deposited by atomic layer deposition (ALD) at 150 and 250 °C on FTO and Si/SiO2 substrates to examine the effect of deposition conditions on morphology, structure, chemical stability, and photoelectrochemical performance. Films grown at 150 °C were amorphous and crystallised into anatase after annealing at 500 °C, accompanied by nanoscale morphological rearrangement. In contrast, films deposited at 250 °C were amorphous and non-stoichiometric (TiO2−x) with Ti3+ self-doping; annealing reduced the doping level without inducing crystallisation. The films degraded in 0.1 M HClO4 within 72 h but remained stable in alkaline media (pH 8). Electrochemical studies using the [Fe(CN)6]3−/4− redox couple showed that low-temperature ALD TiO2 layers (8–50 nm) effectively blocked charge transfer, whereas this approach was unsuitable for high-temperature ALD films due to…
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Taxonomy
TopicsSemiconductor materials and devices · TiO2 Photocatalysis and Solar Cells · Copper Interconnects and Reliability