# Ferroelectrics Hybrids: Harnessing Multifunctionality of 2D Semiconductors in the Post‐Moore Era

## TL;DR

This paper reviews hybrid systems combining ferroelectrics, 2D semiconductors, and molecular switches to create next-generation electronics beyond Moore's law.

## Contribution

The paper introduces a triple-hybrid paradigm to transcend Moore's law through multifunctional, high-density electronics.

## Key findings

- 2D ferroelectric field-effect transistors (FeFETs) show promise for high integration density.
- Nanoscale domain wall engineering enables improved performance and scalability.
- Monolithic 3D integration enhances chip-level density and functionality.

## Abstract

The rise of big data in today's computing has highlighted the significant limitations of von Neumann architectures for data storage and processing. Concurrently, the downscaling of silicon‐based transistors while retaining low power efficiency and high system reliability has become increasingly challenging. By adopting a post‐Moore approach, this Review proposes the use of hybrid systems comprising ferroelectric materials, 2D semiconductors, and functional molecular switches to respond to current demands for simultaneous high integration density and multifunctional performance. The representative applications of 2D ferroelectric field‐effect transistors (FeFETs) are reviewed and advances in shrinking ferroelectric domain walls at the (sub)nanometer scale are highlighted. The incorporation of molecular switches to enable multimodal device programmability is explored and the implementation of monolithic 3D (M3D) integration to boost chip‐level density and system functionality is discussed. Finally, a forward‐looking vision is presented for future transistors built upon novel ferroelectric platforms. Taken together, this triple‐hybrid paradigm offers a compelling path to transcend Moore's law, paving the way for next‐generation electronics with unprecedented functions and performance.

In this Review, the state of art of ferroelectric hybrid systems—combining ferroelectrics, 2D semiconductors, and molecular switches is presented—as next‐generation platforms for high‐density, multifunctional electronics. By discussing 2D FeFET applications, nanoscale material downscaling, M3D integration, and emerging ferroelectrics, it highlights strategies to overcome scaling bottlenecks and unlock device‐level multifunctionality.