Correction: Large-area thin-film synthesis of photoactive Cu3PS4 thiophosphate semiconductor with 0–14 pH stability range

TL;DR

This paper corrects a previously published study on the synthesis of a photoactive semiconductor material stable across a wide pH range.

Contribution

The paper provides corrections to the original study's information or references.

Findings

The original study details the synthesis of Cu3PS4 thiophosphate semiconductor.

The material is stable in a pH range from 0 to 14.

The correction addresses errors or updates in the original publication.

Abstract

Correction for ‘Large-area thin-film synthesis of photoactive Cu3PS4 thiophosphate semiconductor with 0–14 pH stability range’ by Lena A. Mittmann et al., Chem. Sci., 2025, 16, 21862–21873, https://doi.org/10.1039/D5SC05882A.

Full text

The original version of this article contained typographical errors in the following section of text:

At the CBM, the dominant antibonding interactions are between S 3p states and P 4s states, with a higher P 4s character at the Γ point than at the CBM on the Γ–X path. Again, the situation is analogous to S 3p/In 6s mixing at the CBM of chalcopyrites and S 3p/Sn 6s mixing in kesterites, pointing to the similar role of P, In, and Sn across these copper-based sulfides, and to phosphorus behaving much like a post-transition metal cation.

Here, P 4s should be P 3s, In 6s should be In 5s and Sn 6s should be Sn 5s. This typographical error does not affect any of the conclusions drawn within the manuscript.

The Royal Society of Chemistry apologises for these errors and any consequent inconvenience to authors and readers.