PMC · DOI:10.1021/acsaelm.5c02645·January 7, 2026
Correction to “Structural Properties of Hf0.5Zr0.5O2 Integrated on Silicon”
Kit de Hond, Mart Salverda, Majid Ahmadi, Evert Houwman, Beatriz Noheda, Bart J. Kooi, Guus Rijnders, Gertjan Koster
Abstract
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TopicsFerroelectric and Negative Capacitance Devices · MXene and MAX Phase Materials · Semiconductor materials and devices