# In Situ GISAXS Study of IZO Deposition via Magnetron Sputtering for Optoelectronic Devices: Film Growth and Ion Bombardment‐Induced Degradation Dynamics

**Authors:** Huaying Zhong, Marlene Sophie Härtel, Wei Chen, Lukas V. Spanier, Shanshan Yin, Jiahuan Zhang, Bertwin Bilgrim Otto Seibertz, Bernd Szyszka, Steve Albrecht, Matthias Schwartzkopf, Stephan V. Roth, Peter Müller‐Buschbaum

PMC · DOI: 10.1002/advs.202516853 · Advanced Science · 2025-11-07

## TL;DR

This study uses in situ X-ray techniques to observe how ion bombardment affects the growth and degradation of IZO films during sputtering, revealing differences based on the substrate material.

## Contribution

The study provides real-time insights into ion bombardment effects on film growth and degradation dynamics during IZO deposition using GISAXS.

## Key findings

- Spin-coated ZnO NP films show reduced density and surface changes under ion bombardment.
- ITO films resist degradation better, allowing successful IZO layer formation.
- IZO growth on ITO follows nucleation, coalescence, and layer formation stages.

## Abstract

Magnetron sputtering is a well‐established fabrication technique in industry for the deposition of transparent conductive oxides toward optoelectronic device applications. However, the bombardment with highly energetic O− ions can damage underlying sensitive layers of devices or the growing film itself, being a critical issue. Its substrate‐dependent impact is not fully understood. Herein, the early‐stage dynamics of film growth and ion‐bombardment‐induced degradation are studied independently by applying two distinct templates as substrates for indium zinc oxide (IZO) deposition via radio frequency magnetron sputtering, with real‐time monitoring via in situ grazing‐incidence small‐angle X‐ray scattering (GISAXS). X‐ray reflectivity results reveal that O− ion‐bombardment results in a reduced density and modified surface morphology of spin‐coated ZnO nanoparticle (NP) films, despite a relatively high working pressure, whereas commercially sputter‐coated polycrystalline indium tin oxide (ITO) films exhibit stronger resistance, enabling the successful formation of an IZO layer. Quantitative analysis of GISAXS data shows that the growth regimes of IZO deposited on the ITO film undergo the stages of nucleation, adsorption‐driven coalescence, and layer formation. Conversely, the degradation dynamics on the ZnO NP film exhibit a cyclical pattern under ion bombardment, characterized by alternating phases of adsorption‐desorption equilibrium, physical degradation, reestablished adsorption‐desorption equilibrium, and surface amorphization.

The dynamics of film growth and ion bombardment‐induced degradation during the film deposition via radio frequency magnetron sputtering of indium zinc oxide are probed with real‐time monitoring via in situ grazing‐incidence small‐angle X‐ray scattering, causing physical degradation on a spin‐coated ZnO NP film and film growth on a robust, commercially sputtered indium tin oxide film.

## Full-text entities

- **Chemicals:** oxides (MESH:D010087), O (MESH:D010100), ITO (MESH:C109984), IZO (-), ZnO (MESH:D015034)

## Full text

_Full body text omitted from this summary view._ Fetch the complete paper as Markdown: https://tomesphere.com/paper/PMC12850019/full.md

## Figures

8 figures with captions in the complete paper: https://tomesphere.com/paper/PMC12850019/full.md

## References

42 references — full list in the complete paper: https://tomesphere.com/paper/PMC12850019/full.md

---
Source: https://tomesphere.com/paper/PMC12850019