# SIMS Investigation of Al Diffusion Across Interfaces in AlGaN/GaN and AlN/GaN Heterostructures

## TL;DR

This paper studies how aluminum diffuses in AlGaN/GaN and AlN/GaN structures using high-temperature annealing and SIMS, revealing differences in diffusion behavior and stability.

## Contribution

The study provides new insights into the diffusion mechanisms and thermal stability of Al in AlGaN/GaN and AlN/GaN heterostructures.

## Key findings

- Al out-diffusion in AlGaN/GaN has a low activation energy (2.1–2.4 eV) and a high pre-factor (4.03 × 10−5 cm² s−1).
- AlN/GaN structures show significantly higher activation energies (3.66 and 4.59 eV) for in- and out-diffusion.
- The higher activation energy in AlN/GaN confirms its better thermal stability due to a strong energy barrier.

## Abstract

This study investigates Metal–Organic Vapor Phase Epitaxy (MOVPE)-grown AlGaN/GaN and AlN/GaN heterostructures using high-temperature thermal annealing and Secondary Ion Mass Spectrometry (SIMS). By fitting experimental diffusion coefficients (DAl) to the Arrhenius equation, two crucial kinetic parameters were found: the activation energy (Ea) and the pre-factor (D0). In the AlGaN/GaN structure, the dominating out-diffusion of Al has a large D0 = 4.03 × 10−5 cm2 s−1 and a low activation energy in the range of [2.1–2.4 eV]. A substitutional diffusion mechanism in the crystal lattice mediated by defects is closely linked to the low Ea. Significantly higher activation energies (Ea) of 3.66 and 4.59 eV, respectively, control both in- and out-diffusion processes in the AlN/GaN structure. The better intrinsic thermal stability of the pure AlN layer, whose stability is attained by a strong energy barrier, is confirmed by the increase of more than 1.2 eV in Ea.