Design of Lattice-Matched InAs1−xSbx/Al1−yInySb Type-I Quantum Wells with Tunable Near-To Mid-Infrared Emission (2–5 μm): A Strain-Optimized Approach for Optoelectronic Applications

TL;DR

This paper proposes a strain-optimized design for quantum wells that can emit light in the near-to mid-infrared range (2–5 µm), useful for optoelectronic applications.

Contribution

The novel contribution is a strain-optimized design strategy for InAs1−xSbx/Al1−yInySb quantum wells with tunable emission in the 2–5 µm range.

Findings

Type-I alignment is achieved for Sb contents x ≤ 0.40 and In contents 0.10 < y ≤ 1.

Emission tuning between 2–5 µm is possible with <5% strain-induced energy deviation.

The design enables high-efficiency infrared optoelectronic devices for sensing and communications.

Abstract

We propose a strain-optimized design strategy for lattice-matched InAs1−xSbx/Al1−yInySb Type-I quantum wells (QWs) that emit across the near-to mid-infrared spectrum (2–5 µm). By combining elastic strain energy minimization with band offset calculations, we identify Type-I alignment for Sb contents (x ≤ 0.40) and In contents (0.10 < y ≤ 1). At the same time, Type-II dominates at higher Sb compositions (x ≥ 0.50). Using the transfer matrix method under the effective mass approximation, we demonstrate precise emission tuning via QW thickness (LW) and compositional control, achieving a wavelength coverage of 2–5 µm with <5% strain-induced energy deviation. Our results provide a roadmap for high-efficiency infrared optoelectronic devices, addressing applications in sensing and communications technologies.

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