Radio-Frequency Characteristics of Stacked Metal–Insulator–Metal Capacitors in Radio-Frequency CMOS Devices

TL;DR

This paper studies the RF performance of stacked MIM capacitors in CMOS devices and proposes an improved model for accurate high-frequency analysis.

Contribution

A modified equivalent circuit model for stacked MIM capacitors with enhanced accuracy at high frequencies.

Findings

Three-step de-embedding using a thru pattern improves precision in stacked MIM capacitor analysis.

The modified model maintains accuracy across high-frequency bands.

Parameters like quality factor and S/Y-parameters were effectively analyzed using the new model.

Abstract

This paper describes the radio-frequency (RF) characteristics of stacked metal–insulator–metal (MIM) capacitors used in RF CMOS technology. To ensure accurate analysis, various de-embedding methods for stacked MIM capacitors were verified, and an improved RF model was constructed accordingly. To develop an equivalent circuit for the improved RF model by analyzing the RF characteristics of stacked MIM capacitors, we compared de-embedding methods for measured stacked MIM capacitors: one-step (open-pattern or short-pattern) de-embedding and two-step (combined open-pattern and short-pattern) de-embedding. For the analysis of stacked MIM capacitors, at least two-step de-embedding was used, while for precise de-embedding, three-step de-embedding using a thru pattern was employed. Based on the measured values obtained using these two-step de-embedding methods, a modified equivalent circuit was constructed. This circuit was analyzed based on various parameters, including MIM capacitance, quality factor, S-parameter, and Y-parameter, and the results were comparatively examined. The findings highlight outstanding accuracy of the modified model, which is maintained even in high frequency bands.

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