Hafnium-Based Ferroelectric Diodes for Logic-in-Memory Application
Shuo Han, Yefan Zhang, Xi Wang, Peiwen Tong, Chuanzhi Liu, Qimiao Zeng, Jindong Liu, Xiao Huang, Qingjiang Li, Rongrong Cao, Wei Wang
TL;DR
This paper introduces a new type of low-power memory-based computing device using hafnium-based ferroelectric diodes to perform logic operations efficiently.
Contribution
A novel ferroelectric diode structure is proposed for implementing 16 Boolean logic operations with ultralow power consumption.
Findings
The TiN/Hf0.5Zr0.5O2/HfO2/TiN ferroelectric diode enables 16 Boolean logic operations through cascaded configurations.
The device achieves attojoule-level one-bit full-adder computation with non-destructive readout and bidirectional rectification.
Simulation results show superior performance and ultralow power consumption for in-memory computing.
Abstract
Due to the Von Neumann bottleneck of traditional CMOS computing, there is an urgent need to develop in-memory logic devices with low power consumption. In this work, we demonstrate ferroelectric diode devices based on the TiN/Hf0.5Zr0.5O2/HfO2/TiN structure, implementing 16 Boolean logic operations through single-step or multi-step (2–3 steps) cascade and achieving attojoule-level one-bit full-adder computation. The TiN/Hf0.5Zr0.5O2/HfO2/TiN ferroelectric diode exhibits non-destructive readout and bidirectional rectification characteristics, with the conduction mechanism following Schottky emission behavior in the on-state. Based on its bidirectional rectification characteristics, we designed and simulated the circuit scheme of 16 Boolean logic and one-bit full-adder through cascaded operations. Both the input and output logic values are represented in the form of resistance, without…
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Taxonomy
TopicsFerroelectric and Negative Capacitance Devices · Ferroelectric and Piezoelectric Materials · Advancements in Semiconductor Devices and Circuit Design