# Oxidation of Amorphous Porous VOx at Low Temperatures for the Formation of Thermochromic VO2 Films

**Authors:** Hiedra Acosta-Rivera, Victor Rico, Francisco Javier Ferrer, Teresa Cristina Rojas, Rafael Alvarez, Nicolas Martin, Agustín R. González-Elipe, Alberto Palmero

PMC · DOI: 10.3390/nano16020130 · 2026-01-19

## TL;DR

A low-temperature oxidation process creates thermochromic VO2 films from amorphous VOx, improving transparency and optical modulation.

## Contribution

A novel low-temperature oxidation method is introduced to form VO2 domains in amorphous VOx films, enabling thermochromic performance.

## Key findings

- Low-temperature oxidation at 260 °C forms VO2, V3O7, and V2O5 crystalline domains in VOx films.
- Optimal thermochromic performance occurs at [O]/[V] = 1.5 and 280 °C, with 50% near-infrared optical modulation.
- Oxidation causes volume expansion, reducing pores and enhancing transparency and electrical modulation.

## Abstract

Thermochromic VO2 crystalline domains have been formed in amorphous nanocolumnar VOx films by means of a low-temperature oxidation process. The oxidation of an amorphous film with [O]/[V] below 1.9 favors the formation of VO2, V3O7, and V2O5 crystalline domains in the material for temperatures as low as 260 °C, while values above 1.9 lead to the sole formation of the V2O5 phase. It is found that the absorption of oxygen also causes a relevant film volume expansion that makes pores shrink. Under some specific conditions, low-temperature oxidation causes the near disappearance of the amorphous regions, clearly improving the overall transparency and optimizing the optical and electrical modulation capabilities associated with the presence of crystalline VO2 domains. The best thermochromic performance was found when the original stoichiometry was [O]/[V] = 1.5 and the oxidation temperature was 280 °C. These conditions yield a relatively transparent coating in the visible range that presents an optical modulation in the near-infrared range of nearly 50% and a drop of electrical resistivity of more than two orders of magnitude, with a transition temperature of 50.3 °C. A tentative model based on the volume expansion experienced by the film upon oxidation is proposed, which links the structural/chemical features of the material and the formation of the crystalline domains at such relatively low temperatures.

## Linked entities

- **Chemicals:** VO2 (PubChem CID 34008), V2O5 (PubChem CID 14814), VOx (PubChem CID 169489554)

## Full-text entities

- **Chemicals:** V (MESH:D014639), V3O7 (-), O (MESH:D010100), V2O5 (MESH:C066075)

## Figures

13 figures with captions in the complete paper: https://tomesphere.com/paper/PMC12844038/full.md

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Source: https://tomesphere.com/paper/PMC12844038