Research on the Parasitic Inductance of the Bonding Wires in IGBT Modules Based on Their Morphology and Layout
Junwei Cao, Sheng Wu, Yanhui Wang, Chongyang Xu, Xiaotong Wang, Weibin Jiang, Yingchun Wang, Yuan Wang
TL;DR
This paper studies how the shape and layout of bonding wires in IGBT modules affect their parasitic inductance, aiming to improve device performance and reliability.
Contribution
A new analysis model is proposed to study the impact of bonding wire morphology and layout on parasitic inductance.
Findings
Mathematical calculations and Ansys Q3D simulations showed good correlation in analyzing bonding wire inductance.
The model helps reduce the impact of bonding parameters on total parasitic inductance during pre-layout stages.
Abstract
As a typical electronic switching device, IGBT is widely used in various fields. Reducing the parasitic inductance parameters of IGBT is of great significance for improving the performance of power devices, enhancing system stability and reliability. To study the parasitic inductance of the internal bonding wire connection structure during the operation of IGBT modules, this paper considers the morphological modeling of bonding wires, bonding parameters, and the layout of bonding wire arrays, and proposes a new analysis model. Through mathematical calculation of the analysis model and Ansys Q3D simulation, the bonding wires with different geometric dimensions and layouts were studied and good correlation were obtained. This will reduce the impact of bonding parameters on the total parasitic inductance of the bonding wire during the pre-layout stage.
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Taxonomy
TopicsSilicon Carbide Semiconductor Technologies · GaN-based semiconductor devices and materials · Electromagnetic Compatibility and Noise Suppression