# A New Simulation Method to Assess Temperature and Radiation Effects on SiC Resonant-Converter Reliability

## TL;DR

This paper introduces a new simulation method to evaluate how temperature and radiation affect the reliability of silicon carbide power converters.

## Contribution

A novel system-level simulation method is proposed to assess SiC resonant converter reliability under temperature and radiation.

## Key findings

- SiC MOSFETs show stable conduction loss at high temperatures due to high thermal conductivity.
- Increased radiation doses cause a negative shift in conduction losses of SiC devices, impacting long-term reliability.
- The simulation method integrates device and system-level reliability assessments for Si and SiC converters.

## Abstract

Silicon carbide (SiC) power converters are increasingly used in automotive, renewable energy, and industrial applications. While reliability assessments are typically performed at either the device or system level, an integrative approach that simultaneously evaluates both levels remains underexplored. This article presents a novel system-level simulation method with two strategies to evaluate the reliability of power devices and a resonant converter under varying temperatures and total ionizing doses (TIDs). Temperature-sensitive electrical parameters (TSEPs), such as on-state resistance (RON) and threshold voltage shift (ΔVTH), are calibrated and analyzed using a B1505A curve tracer. These parameters are incorporated into the system-level simulation of a 300 W resonant converter with a boosting cell. Both Silicon (Si) and SiC-based power resonant converters are assessed for power application in space engineering and harsh environments. Additionally, gate-oxide degradation and ΔVTH-related issues are discussed based on the simulation results. The thermal-strategy results indicate that SiC MOSFETs maintain a more stable conduction loss at elevated temperatures, exhibiting higher reliability due to their high thermal conductivity. Conversely, increased TIDs result in a negative shift in conduction losses across all SiC devices under the radiation strategy, affecting the long-term reliability of the power converter.