# The Iontronic Quantum Dot

## TL;DR

This paper introduces a new method for creating quantum dot devices using ion gating, simplifying fabrication and improving control.

## Contribution

The novel iontronic quantum dot design eliminates the need for thin dielectric layers and enables single-step fabrication.

## Key findings

- Iontronic QDs show clear Coulomb blockade peaks and magnetic field dependence.
- Devices with two identical iontronic QDs in series demonstrate reproducibility.
- The approach simplifies fabrication and enhances QD quality through device architecture and confinement potential.

## Abstract

Semiconductor quantum
dots (QDs) are key building blocks for quantum
technologies with applications in quantum computation, communication,
and sensing. QD device architectures rooted in conventional solid-state
device fabrication paradigms are grappled with complex protocols to
balance ease of realization, scalability, and transport properties.
Using ion gating, we demonstrate a novel paradigm of quantum device
engineering, that enables the realization and control of the iontronic QD. Clear Coulomb blockade peaks and their dependence
on an externally applied magnetic field are reported, together with
the impact of device architecture and confinement potential on QD
quality. Devices incorporating two identical iontronic QDs in series
are realized, addressing the reproducibility of the approach. A novel
class of zero-dimensional quantum devices, iontronic QDs, overcome
the need for thin dielectric layers, facilitating single-step device
fabrication. This approach holds the potential to impact the development
of quantum materials and devices in the context of solid-state quantum
technologies.