# Experimental evaluation of silicon carbide P-N detectors under thermal and fast neutron irradiation at the RA-6 nuclear research reactor

**Authors:** Martín Pérez, Juan Jerónimo Blostein, Felipe Zamorano, Celeste Fleta, Julio Marín, Giulio Pellegrini, Consuelo Guardiola

PMC · DOI: 10.1038/s41598-025-32175-8 · Scientific Reports · 2025-12-19

## TL;DR

This paper evaluates silicon carbide detectors for neutron detection in high-radiation environments, showing they work well for both thermal and fast neutrons.

## Contribution

The study experimentally validates SiC P–N diodes for thermal and fast neutron detection using real reactor and AmBe source data.

## Key findings

- SiC detectors showed linear response and no saturation up to 500 kW reactor power with 4.39% thermal neutron detection efficiency.
- Fast neutron detection efficiency increased with converter thickness, reaching 0.57% with an 800 µm polypropylene layer.
- PHITS simulations confirmed the experimental results, supporting SiC's use in high gamma background environments.

## Abstract

Silicon carbide (SiC) detectors present key advantages for neutron detection in harsh radiation environments, including high radiation hardness, low leakage current, and excellent thermal stability. In this work, we report on the characterization of SiC P–N diodes manufactured at the Institute of Microelectronics of Barcelona (IMB-CNM-CSIC) for both thermal and fast neutron detection. For thermal neutron measurements, 50 µm and 100 µm SiC diodes coupled to a 6LiF conversion layer were tested at the RA-6 Nuclear Research Reactor, San Carlos de Bariloche, Argentina. The detectors exhibited a linear response with reactor power up to 500 kW, with no evidence of saturation or dead-time effects, and an intrinsic detection efficiency of (4.39±0.22)%. The detection efficiency was characterized as a function of the neutron incidence angle, showing a monotonic increase. For fast neutrons, 100 µm diodes coupled to polypropylene layers of varying thicknesses were characterized using an AmBe source. The results showed that the intrinsic detection efficiency increased with converter thickness, reaching a maximum value of (0.57±0.04)% for an 800 µm layer. PHITS Monte Carlo simulations reproduced the experimental data, validating the interpretation of the measured spectra. These results confirm the potential of SiC-based detectors for reliable monitoring of thermal and fast neutrons in environments with high gamma background, including radiotherapy, nuclear reactors, and others.

## Full-text entities

- **Chemicals:** silicon carbide P-N (-)

## Full text

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## Figures

9 figures with captions in the complete paper: https://tomesphere.com/paper/PMC12815908/full.md

## References

6 references — full list in the complete paper: https://tomesphere.com/paper/PMC12815908/full.md

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Source: https://tomesphere.com/paper/PMC12815908