# Meta-device for sensing subwavelength lateral displacement

**Authors:** Shufan Chen, Yubin Fan, Hao Li, Xiaodong Qiu, Ben Wang, Lijian Zhang, Shumin Xiao, Din Ping Tsai

PMC · DOI: 10.1038/s41377-025-02067-7 · Light, Science & Applications · 2026-01-12

## TL;DR

A new method using two-photon interference and metasurfaces improves lateral displacement measurement for lithography with fewer photons and higher speed.

## Contribution

A novel two-photon state transverse displacement measurement method using polarization gradient metasurfaces is introduced.

## Key findings

- The new method reduces detected photons to 3% of classical methods while maintaining precision.
- The approach is suitable for next-generation lithography with faster acquisition times.
- The method uses a polarization gradient metasurface for high-speed nanoscale alignment.

## Abstract

Accurate transverse displacement measurement is essential for precise mask-to-wafer positioning in lithography. While lateral displacement metrology has achieved nanometer-level precision, the limitations imposed by coherent state and grating challenge in-situ measurement speed and precision. Here, we introduce a two-photon state transverse displacement measurement method utilizing a polarization gradient metasurface by employing two-photon state interference. Compared with the classical method, our new method can experimentally reduce the number of detected photons to around 3% with equivalent precision. These attributes make the two-photon state polarization gradient metasurface approach highly suitable for integration with semiconductor lithography processes and show its promise in realizing equivalent measurement precision within notably shorter acquisition durations, providing a robust solution for next-generation transverse displacement measurement requirements.

Two-photon-enhanced lateral displacement metrology with polarization gradient (geometric phase) metasurfaces achieves 97% photon number reduction for high-speed nanoscale mask-wafer alignment in next-generation lithography.

## Full-text entities

- **Chemicals:** MIBK (MESH:C005458), TiO2 (MESH:C009495), Cr (MESH:D002857), PG (-), PMMA (MESH:D019904)
- **Mutations:** N00N

## Full text

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## Figures

6 figures with captions in the complete paper: https://tomesphere.com/paper/PMC12791143/full.md

## References

2 references — full list in the complete paper: https://tomesphere.com/paper/PMC12791143/full.md

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Source: https://tomesphere.com/paper/PMC12791143