# Integrated PbTe Quantum Dots for Two-Color Detection in II–VI Wide-Bandgap Diodes

## TL;DR

This paper describes a new method to create dual-wavelength photodetectors using PbTe quantum dots in wide-bandgap diodes for visible and infrared detection.

## Contribution

The integration of PbTe quantum dots into II–VI diodes enables two-color detection through band-to-band transitions.

## Key findings

- The devices show high responsivity to infrared radiation at ~2.0 μm with a peak of 8 V/W at 200 K.
- Sensitivity to visible light was also observed, with a maximum responsivity of 20 V/W at 0.69 μm.
- The IR response is governed by band-to-band optical transitions in the PbTe quantum dots.

## Abstract

Quantum dots (QDs) composed of the narrow-bandgap semiconductor PbTe were incorporated into the depletion region of p–n junctions based on wide-bandgap II–VI semiconductors (p-ZnTe/n-CdTe). The heterostructures were grown by molecular beam epitaxy (MBE) on semi-insulating GaAs (100) substrates. The depletion region was engineered by depositing 20 alternating thin layers of CdTe and PbTe, then thermal annealing under ultrahigh vacuum. As revealed by cross-sectional scanning electron microscopy (SEM), the initially continuous PbTe layers transformed into arrays of zero-dimensional nanostructures, namely PbTe QDs. The formation of PbTe QDs in a CdTe matrix arises from the structural mismatch between the zinc blende and rock-salt crystal structures of the two materials. Electron beam-induced current (EBIC) scans confirmed that the QDs are localized within the depleted charge region between the p-ZnTe and n-CdTe layers. The resulting wide-gap diodes containing narrow-band QDs show pronounced sensitivity to infrared radiation in the spectral range of 1–4.5 μm, with a peak responsivity of approximately 8 V/W at a wavelength of ~2.0 μm and a temperature of 200 K. A red-shift in the cutoff wavelength when temperature decreases indicates that the infrared (IR) response is governed by band-to-band optical transitions in the PbTe QDs. In addition, the devices show sensitivity to visible radiation, with a maximum responsivity of 20 V/W at 0.69 μm. These results demonstrate that wide-bandgap p–n junctions incorporating narrow-bandgap QDs can function as dual-wavelength (visible and infrared) photodetectors, with potential applications in two-color detection and infrared solar cells.