# Effect of Iron Site Substitution on Magneto-Optical Properties of Bi-Substituted Garnets for Magnetic Hologram Memory

## TL;DR

This paper studies how substituting iron with aluminum or gallium affects the magneto-optical properties of bismuth-substituted garnet films for use in magnetic holographic memory.

## Contribution

The study reveals how Al and Ga substitution alters Faraday rotation and figure of merit in Bi-substituted garnets, aiding material design for magnetic hologram memory.

## Key findings

- Ga substitution causes a reversal in Faraday rotation angle sign, indicating a compensation composition.
- Al substitution reduces the residual Faraday rotation angle at zero magnetic field above x = 0.5.
- Ga-substituted samples show a peak in figure of merit around x = 1.5~1.9, while Al-substituted peaks at x = 2.1.

## Abstract

We have developed a magnetic holographic memory using transparent bismuth-substituted rare-earth iron garnet as a next-generation optical memory. To realize this, a magnetic garnet with a large Faraday rotation angle and a moderately small extinction coefficient is required. In this study, we investigated the effect of Al or Ga substitution for the iron site of bismuth-substituted yttrium iron garnet (Bi/YIG) films on their magneto-optical properties. The Faraday rotation angle decreased with the amount of substitution, x, increase, for both Al- and Ga-substituted Bi/YIG, and a reversal of sign of rotation angle was only observed for Ga-substituted Bi/YIG, indicating a compensation composition. In the Al-substituted sample, due to small squareness, the residual Faraday rotation angle at zero magnetic field, |θR,res|, gradually decreased above x = 0.5, whereas in the Ga-substituted sample, the squareness ratio increased with increasing substitution up to x = 2.0, and thus showed a peak at x = 1.5. The Curie temperature and extinction coefficient were reduced with increasing substitution amount. As a result of a decrease in extinction coefficient, k, the high figure of merit, (|θR,res|/2πk) · λ was obtained around x = 1.5~1.9 for Ga and x = 2.1 for Al, while it was smaller than that of Bi/RIG we usually used.