Impact of Surface Passivation on the Efficiency and High-Speed Modulation of III–V GaAs/AlGaAs Nanopillar Array LEDs
Bejoys Jacob, João Azevedo, João Lourenço, Filipe Camarneiro, Jana B. Nieder, Bruno Romeira
TL;DR
This paper shows how surface passivation improves the efficiency and speed of tiny III–V nanopillar LEDs, making them viable for advanced optical technologies.
Contribution
The study demonstrates electrically driven nanoLEDs with record carrier lifetimes and high modulation speeds through surface passivation techniques.
Findings
Surface passivation achieved differential carrier lifetimes of ∼0.61 ns in nanoarray LEDs.
Devices showed low surface velocity (S ∼ 0.7–2.7 × 10⁴ cm/s) and high internal quantum efficiency (∼0.45).
NanoLEDs with subnanosecond modulation response are suitable for optical data communications and AR/VR displays.
Abstract
III–V semiconductor nanolight sources with deep-subwavelength dimensions (≪1 μm) are essential for miniaturized photonic devices such as nanoLEDs and nanolasers. However, these nanoscale emitters typically suffer from substantial nonradiative recombination at room temperature, resulting in low efficiency and ultrashort lifetimes (<100 ps). Previous works have predominantly studied surface passivation of nanoLEDs under optical pumping conditions, while practical applications require electrically driven nanoLEDs. Here, we investigate the influence of surface passivation on the efficiency and high-speed modulation response of electrically pumped III–V GaAs/AlGaAs nanopillar array LEDs. Surface passivation was performed using ammonium sulfide chemical treatment followed by encapsulation with a 100 nm silicon nitride layer deposited via low-frequency plasma-enhanced chemical vapor…
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Taxonomy
TopicsNanowire Synthesis and Applications · Quantum Dots Synthesis And Properties · Semiconductor Quantum Structures and Devices