# A quieter state of charge and ultra-low-noise of the collective current in quasi-1D charge-density-wave nanowires

## TL;DR

Researchers found that charge-density-wave nanowires produce ultra-low electronic noise, which could improve the performance of nanoscale and quantum electronics.

## Contribution

The study shows that (TaSe4)2I and NbS3 nanowires exhibit noise levels below the thermal limit due to correlated electron transport.

## Key findings

- Normalized noise spectral density in (TaSe4)2I nanowires decreases linearly with current.
- Similar noise suppression is observed in NbS3-II nanowires at room temperature.
- Current fluctuations in these materials are intrinsically lower than in conventional conductors.

## Abstract

Electronic flicker noise limits phase stability in communication systems, reduces the sensitivity and selectivity of sensors, and degrades coherence in quantum devices. There is a strong need for unconventional materials and strategies for achieving ultra-low-noise performance in nanoscale and quantum electronics. Here, we demonstrate that in nanowires of the quasi-one-dimensional, fully gapped charge-density-wave material (TaSe4)2I, low-frequency electronic noise is suppressed below the limit of thermalized charge carriers in passive resistors. When the current is dominated by the sliding Frohlich condensate, the normalized noise spectral density, \documentclass[12pt]{minimal}
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\begin{document}$${S}_{I}/{I}^{2}$$\end{document}SI/I2, decreases linearly with current, \documentclass[12pt]{minimal}
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\begin{document}$$I$$\end{document}I — a striking departure from the constant value of \documentclass[12pt]{minimal}
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\begin{document}$${S}_{I}/{I}^{2}$$\end{document}SI/I2, observed in conventional conductors. No residual minimum noise level is reached for the current of the electron-lattice condensate in (TaSe4)2I nanowires. Repeating the measurements for another charge-density wave conductor, NbS3-II, we found a similar reduction below the normal electron limit at room temperature. Our findings signal intrinsically lower current fluctuations within a correlated electron transport regime.

Flicker noise limits the performance of electronics. Here, the authors demonstrate in nanowires of charge-density wave materials (TaSe4)2I and NbS3 that low-frequency electronic noise is suppressed below the limit of thermalized charge carriers in passive resistors.