# Local avalanche photodetectors driven by lightning-rod effect and surface plasmon excitations

**Authors:** Zhao Fu, Jia Liu, Meng Yuan, Jiafa Cai, Rongdun Hong, Xiaping Chen, Dingqu Lin, Shaoxiong Wu, Yuning Zhang, Zhengyun Wu, Zhanwei Shen, Zhijie Wang, Jicheng Wang, Mingkun Zhang, Zhilin Yang, Deyi Fu, Feng Zhang, Rong Zhang

PMC · DOI: 10.1038/s41467-025-66790-w · Nature Communications · 2025-12-03

## TL;DR

This paper introduces a new design for ultraviolet avalanche photodetectors that improves performance and reduces breakdown voltage using micro-holes and nano-triangles.

## Contribution

The novel integration of lightning-rod effect and surface plasmon excitations in APD design significantly lowers breakdown voltage.

## Key findings

- The device achieves an avalanche breakdown voltage of ~14.5 V, a tenfold reduction compared to conventional APDs.
- It demonstrates a detectivity of 2 × 10¹³ Jones and nanosecond-level response time without a quenching circuit.
- The design enables stable detection through localized field enhancement using micro-holes and Al nano-triangles.

## Abstract

Sensitive avalanche photodetectors (APDs) that operate within the ultraviolet spectrum are critically required for applications in detecting fire and deep-space exploration. However, the development of such devices faces significant challenges, including high avalanche breakdown voltage, the necessity for complex quenching circuits, and thermal runaway associated with Geiger-mode avalanche operation. To mitigate these issues, we report on a 4H-SiC APD design utilizing micro-holes (MHs) structures and Al nano-triangles (NTs) to enhance surface electric field driven by strong localized surface plasmon excitations and lightning-rod effect. The device demonstrates a low avalanche breakdown voltage of approximately 14.5 V, a high detectivity of 2 × 1013 Jones, a nanosecond-level response time, and repeated stable detections without the requirement of a quenching circuit. Collectively, when compared with the conventional wide-bandgap-based APDs, this device achieves a reduction in avalanche breakdown voltage by an order of magnitude. Consequently, the proposed APD configuration presents a promising candidate for ultraviolet detection and integrated optoelectronic circuits.

This study presents an approach to enhancing the local field of avalanche photodetectors by integrating the lightning-rod effect with localized surface plasmon excitations.

## Full-text entities

- **Diseases:** fire (MESH:D000092422)
- **Chemicals:** 4H-SiC (-), Al (MESH:D000535)

## Full text

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## Figures

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## References

2 references — full list in the complete paper: https://tomesphere.com/paper/PMC12769478/full.md

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Source: https://tomesphere.com/paper/PMC12769478