# Optoelectronic properties and device simulation of ZnS polymorphs as buffer layers for CZTSSe solar cells

**Authors:** Md. Azad Patwary, Aqib Adnan Shafin, Md. Morshed Alam, Rajat Kumar Singh Durjoy, Norasikin Ahmad Ludin, Mohd Sukor Su'ait, Md. Akhtaruzzaman, M. Mottakin

PMC · DOI: 10.1039/d5ra07195j · RSC Advances · 2025-11-18

## TL;DR

This study explores how different forms of ZnS can improve the efficiency of CZTSSe solar cells by acting as better buffer layers.

## Contribution

The work introduces a combined DFT and SCAPS-1D approach to evaluate ZnS polymorphs as buffer layers in CZTSSe solar cells.

## Key findings

- Hexagonal ZnS achieves the highest efficiency (14.18%) due to superior carrier transport properties.
- ZnS crystal phase strongly impacts photovoltaic performance in CZTSSe solar cells.
- Hexagonal ZnS offers better interfacial stability and charge transport than other ZnS polymorphs.

## Abstract

Kesterite (CZTSSe) has emerged as a sustainable thin-film absorber, yet its device efficiencies remain below those of leading photovoltaic technologies. Optimizing the buffer layer (BL) is a promising strategy to overcome these limitations. Here, we combined density functional theory (DFT) calculations with SCAPS-1D simulations to systematically evaluate ZnS polymorphs (cubic, hexagonal, trigonal) as a BL for CZTSSe solar cells. DFT analysis (GGA-PBE, CASTEP) reveals band gaps of 3.51 eV (cubic), 3.52 eV (hexagonal), and 3.53 eV (trigonal). The hexagonal phase exhibits superior carrier transport properties with electron and hole mobilities of 343.2 and 92.6 cm2 V−1 s−1, respectively. Density-of-states analysis confirms Zn-3d orbitals lie deep in the valence band, with S-3p levels predominating close to the Fermi level, and Zn-4s/4p defining the conduction band, highlighting S-3p → Zn-4s/4p transitions. SCAPS-1D simulations for the device ITO/AZO/ZnS/CZTSSe/Au demonstrate that the crystal phase of ZnS strongly impacts photovoltaic performance. Utilizing hexagonal ZnS BL achieves the highest efficiency (PCE 14.18%, JSC 25.93 mA cm−2, FF 62.5%) due to the higher mobility of that crystal system. Furthermore, systematic variation of ZnS thickness, donor density, mobility, band gap, and bulk/interface defect densities, along with back-contact work function and operating temperature, reveals critical design parameters governing charge recombination, series resistance, and interfacial quality to improve performance. This combined theoretical-simulation study highlights that hexagonal ZnS emerges as the most effective BL for CZTSSe solar cells, offering superior carrier transport and interfacial stability for enhanced device efficiency.

Kesterite (CZTSSe) is a sustainable thin-film absorber, but its efficiency still trails leading PV technologies. Studying ZnS polymorphs and using them as buffer layers can improve interface quality and significantly boost device performance.

## Linked entities

- **Chemicals:** ZnS (PubChem CID 54104351), AZO (PubChem CID 7018), Au (PubChem CID 23985)

## Full-text entities

- **Chemicals:** S (MESH:D013455), Zn (MESH:D015032), Au (MESH:D006046), AZO (-)

## Full text

_Full body text omitted from this summary view._ Fetch the complete paper as Markdown: https://tomesphere.com/paper/PMC12625813/full.md

## Figures

11 figures with captions in the complete paper: https://tomesphere.com/paper/PMC12625813/full.md

## References

79 references — full list in the complete paper: https://tomesphere.com/paper/PMC12625813/full.md

---
Source: https://tomesphere.com/paper/PMC12625813