Optical Waveguide-Pair Design for CMOS-Compatible Hybrid III-V-on-Silicon Quantum Dot Lasers
Peter Raymond Smith, Konstantinos Papatryfonos, David R. Selviah

TL;DR
This paper studies the design of hybrid III-V-on-silicon lasers for efficient optical integration compatible with CMOS technology.
Contribution
A novel epitaxial design is proposed to improve III-V/silicon optical coupling in CMOS-compatible waveguides.
Findings
A 220-nm-thick silicon waveguide design enables effective III-V/Si optical coupling.
The proposed design confines optical modes in the III-V section and transfers them efficiently to silicon.
The design is robust to fabrication deviations.
Abstract
The development of compact, energy-efficient integrated lasers operating at 1.3 µm re-mains a critical focus in silicon photonics, essential for advancing data communications and optical interconnect technologies. This paper presents a numerical study of distributed Bragg reflector (DBR) hybrid III-V-on-silicon lasers, analyzing design trade-offs and optimization strategies based on supermode theory. The III-V section of the design incorporates InAs/(Al)GaAs quantum dots (QDs), which offer improved temperature insensitivity at the cost of more complex III-V/Si optical coupling, due to the high refractive index of (Al)GaAs. Consequently, many current laser designs rely on silicon waveguides with a thickness exceeding 220 nm, which helps coupling but limits their compatibility with standard CMOS technologies. To address this challenge, we perform detailed simulations focusing on…
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Taxonomy
TopicsPhotonic and Optical Devices · Semiconductor Quantum Structures and Devices · Semiconductor Lasers and Optical Devices
