Discovery of Room-Temperature Topological Insulators in Functionalized Group VA-VA Binary Monolayers: A First-Principles Investigation
Clement Ding, Xuan Luo
TL;DR
This paper identifies new room-temperature topological insulators using first-principles calculations, which could advance quantum computing and spintronics.
Contribution
The study discovers new room-temperature topological insulators in functionalized binary monolayers using first-principles calculations.
Findings
BiAsO2, BiAsS2, AsPO2, SbAsO2, SbAsS2, BiSbH2, BiSbO2, and BiSbS2 are topological insulators with SOC-induced band gaps of 0.05 to 0.37 eV.
AsPS2 is proposed as a topological semiconductor.
Abstract
Topological insulators and semimetals are necessary to realize quantum computing and spintronics. We use first-principles calculations to investigate the atomic structure, electronic band structure, and Z2 invariants of four sets of pure and functionalized buckled hexagonal monolayers that are promising candidates for topological nature: BiAs, AsP, SbAs, BiSb, and functionalized monolayers BiAsX2, AsPX2, SbAsX2, and BiSbX2 (X = H, O, S). Our results show that BiAsO2, BiAsS2, AsPO2, SbAsO2, SbAsS2, BiSbH2, BiSbO2, and BiSbS2 are topological insulators with small SOC-induced band gaps ranging from 0.05 to 0.37 eV. Further, we propose AsPS2 to be a topological semiconductor. Topological insulators stand on the boundary of induction and conductance and are crucial in realizing quantum computers. The room-temperature topological insulators predicted here will have promising impacts in…
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Taxonomy
TopicsTopological Materials and Phenomena · Chemical and Physical Properties of Materials · 2D Materials and Applications