# Above-Room-Temperature Ferromagnetism in Large-Scale Epitaxial Fe3GaTe2/Graphene van der Waals Heterostructures

## TL;DR

Scientists grew large-scale magnetic layers of Fe3GaTe2 on graphene, achieving above-room-temperature magnetism for use in advanced electronic devices.

## Contribution

Demonstration of large-area, high-quality epitaxial Fe3GaTe2/graphene heterostructures with above-room-temperature ferromagnetism.

## Key findings

- Fe3GaTe2 thin films were grown on graphene/SiC with high crystalline quality.
- The material shows perpendicular magnetic anisotropy and a Curie temperature above 400 K.
- X-ray studies confirmed strong spin and orbital magnetic moments.

## Abstract

Fe3GaTe2 (FGaT), a two-dimensional
(2D) layered
ferromagnetic metal, exhibits a high Curie temperature (T
C) of ∼360 K along with strong perpendicular magnetic
anisotropy (PMA), making it a promising material candidate for next-generation
energy-efficient magnetic devices. However, the vast majority of studies
on FGaT to date have been limited to millimeter-sized bulk crystals
and exfoliated flakes, which are unsuitable for practical applications
and integration into device processing. Also, its combination with
other 2D materials to form van der Waals (vdW) heterostructures has
only been achieved by flake stacking. Consequently, the controlled
large-area growth of FGaT and related heterostructures remains largely
unexplored. In this work, we demonstrate the high-quality, large-area
growth of epitaxial FGaT thin films on single-crystalline graphene/SiC
templates using molecular beam epitaxy. Structural characterization
confirms the high crystalline quality of the continuous FGaT/graphene
vdW heterostructures. Temperature-dependent magnetization and anomalous
Hall measurements reveal robust PMA with an enhanced T
C well above room temperature, reaching up to 400 K. Furthermore,
X-ray absorption and X-ray magnetic circular dichroism spectra provide
insight into the spin and orbital magnetic moment contributions, further
validating the high T
C and robust PMA.
These findings are highly significant for the future development of
high-performance spintronic devices based on 2D heterostructures,
with potential applications in next-generation data storage, logic
processing, and quantum technologies.