Thermally Activated Negative Differential Resistance VO x Memristor with Switchable Rate and Leaky Integrate-and-Fire Spiking Dynamics
Li-Chung Shih, Zih-Siao Liao, Gennady Cherkashinin, Eszter Piros, Lambert Alff, Jen-Sue Chen
TL;DR
A VOx-based memristor can function as both a spiking encoder and a leaky integrate-and-fire neuron, enabling compact and efficient neuromorphic hardware.
Contribution
A VOx-based memristor is demonstrated to intrinsically support dual-mode spiking and LIF dynamics through thermal phase transitions.
Findings
The device achieves a maximum spiking frequency of 570 kHz and energy consumption as low as 4.7 nJ per spike.
The VOx memristor exhibits snap-back negative differential resistance due to a thermally driven insulator-to-metal transition.
Integrated into a passive circuit, the device generates high-frequency spike trains and tunable LIF responses.
Abstract
Spiking neural networks (SNNs) require neuron devices that are both compact and capable of supporting continuous-time and event-based dynamics. Here, we demonstrate a VO x -based threshold switching memristor (TSM) that intrinsically enables dual-mode operation, functioning as both a spiking encoder and a leaky integrate-and-fire (LIF) neuron. While such dual behavior is theoretically possible in volatile memristors, it has only been experimentally demonstrated in limited cases. It is achieved intrinsically in a single VO x -based device, arising from a thermally driven insulator-to-metal transition (IMT) within the VO x layer, confirmed by temperature-dependent XRD and correlated with snap-back negative differential resistance (NDR) observed in electrical measurements. Integrated into a passive circuit, the device generates high-frequency spike trains under analog input and tunable…
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Taxonomy
TopicsAdvanced Memory and Neural Computing · Photoreceptor and optogenetics research · Transition Metal Oxide Nanomaterials