# Improving Domain Wall Thermal Switching and Dynamics in Perpendicular Magnetic Anisotropy Nanowire for Reliable Spintronic Memory

## TL;DR

This paper investigates how to improve the reliability of spintronic memory by controlling thermal effects on magnetic domain walls in nanowires.

## Contribution

The study provides new insights into how material properties and geometry affect thermal stability and motion of domain walls in spintronic devices.

## Key findings

- Higher uniaxial anisotropy energy (Ku) or saturation magnetization (Ms) increases domain wall thermal stability.
- Wider or thicker nanowires reduce thermal nucleation of domain walls.
- Domain wall velocity increases with temperature, indicating thermally assisted motion.

## Abstract

The random thermal switching of domain walls (DWs) in perpendicularly magnetized anisotropy nanowires (PMA) poses a significant challenge for the reliability of spintronic storage devices. In this work, we study the thermal nucleation and dynamics of DWs in PMA nanowires using micromagnetic simulations. The focus is on the effect of device temperature, with attention to uniaxial anisotropy energy (Ku), saturation magnetization (Ms), and nanowire geometry. The results show that larger Ku or Ms reduces DW thermal switching, thereby enhancing DW thermal stability and increasing the DW nucleation temperature (Tn). A wider or thicker nanowire also lowers the probability of thermally induced DW creation, further improving stability. In addition, DW velocity rises with temperature, showing a thermally assisted motion. These results provide useful guidance for designing PMA-based memory devices with improved resistance to thermal fluctuations.