# Silicon-on-Insulator (SOI) Lateral Power-Reduced Surface Field FinFET with High-Power Figure of Merit of 239.3 MW/cm2

## TL;DR

This paper introduces a new FinFET design with high voltage and low resistance, making it suitable for advanced semiconductor applications.

## Contribution

The novel LPR-FinFET design achieves a high-power figure of merit using SOI technology.

## Key findings

- The LPR-FinFET achieves a breakdown voltage of 247 V.
- It has a specific on-resistance of 0.255 mΩ·cm2 and a power figure of merit of 239.3 MW/cm2.

## Abstract

In this study, we propose a lateral power-reduced surface field FinFET (LPR-FinFET) to achieve high breakdown voltage and low on-resistance. We investigate the electric field distribution within the reduced surface field (RESURF) structure under reverse-biased conditions, as well as forward transfer and output characteristics using TCAD simulation. The proposed LPR-FinFET demonstrates a high breakdown voltage of 247 V and a low specific on-resistance of 0.255 mΩ·cm2 with a high-power figure of merit of 239.3 MW/cm2. The superior characteristics of our proposed LPR-FinFET show the potential for applications as a lateral power semiconductor using silicon-on-insulator (SOI) technology.