# Advanced Optoelectronic Applications of Nanopillar Arrays Fabricated by Glancing Angle Deposition

**Authors:** Yating Fang, Lin Yang, Zhifeng Huang

PMC · DOI: 10.3390/nano15201555 · Nanomaterials · 2025-10-13

## TL;DR

This review discusses how nanopillar arrays made using glancing angle deposition can be used in advanced optoelectronic applications and their potential for future devices.

## Contribution

The paper provides a comprehensive overview of recent advancements and challenges in using GLAD-fabricated nanopillar arrays for optoelectronics.

## Key findings

- Nanopillar arrays can be engineered into various shapes for tailored optoelectronic properties.
- GLAD enables wafer-scale production of nanopillar arrays with diverse material compatibility.
- Challenges include scalability and fabrication precision for next-generation devices.

## Abstract

Glancing angle deposition (GLAD) is a unique physical vapor deposition technique to enable wafer-scale production of close-packed nanopillar arrays (NaPAs) made of a wide range of inorganic and organic materials and engineerable structures, offering great potential for advanced optoelectronic applications. By flexibly controlling substrate rotation during GLAD, this technique enables intricate sculpture of nanopillars in vertical/tilted column, helix, zigzag, and square spiral shapes or a combination of these shapes along the vertical growth axis. In particular, NaPAs exhibit unique engineerability in their material/structure-determined optical, electronic, chemical, mechanical, and morphological properties, making them versatile for significant applications in photovoltaics, photodetection, photocatalysis, and advanced displaying. In this review, we provide a comprehensive overview of recent advancements in optoelectronic applications of GLAD-fabricated NaPAs by exploring the relationship between structural features and device functionality. Additionally, we discuss the technical challenges associated with GLAD, such as scalability, material compatibility, and fabrication precision, and address prospects to produce next-generation optoelectronic devices.

## Full-text entities

- **Genes:** AIP (AHR interacting HSP90 co-chaperone) [NCBI Gene 9049] {aka ARA9, FKBP16, FKBP37, PITA1, SMTPHN, XAP-2}, GAN (gigaxonin) [NCBI Gene 8139] {aka GAN1, GIG, KLHL16}
- **Diseases:** injury to (MESH:D014947), GLAD (MESH:D000079822)
- **Chemicals:** O2 (MESH:D010100), graphene (MESH:D006108), Ga2O3 (MESH:C038863), methane (MESH:D008697), perovskite (MESH:C059910), reactive oxygen species (MESH:D017382), Er (MESH:D004871), carbon (MESH:D002244), Si (MESH:D012825), methyl blue (MESH:C414357), Fe2O3 (MESH:C000499), Mo (MESH:D008982), methylammonium (MESH:C027451), polymers (MESH:D011108), oxide (MESH:D010087), GaAs (MESH:C043055), Sulfide (MESH:D013440), Cu2O (MESH:C000520), H+ (MESH:D006859), FA+ (MESH:D005492), hexagonal boron nitride (MESH:C017282), CuI (MESH:C073870), methylene blue (MESH:D008751), hydroxyl radicals (MESH:D017665), Br (MESH:D001966), copper phthalocyanine (MESH:C015445), Ge (MESH:D005857), H2O (MESH:D014867), Ti (MESH:D014025), In2O3 (MESH:C047711), PLD (MESH:C041277), CO2 (MESH:D002245), ZnSe (MESH:C044696), I (MESH:D007455), AlGaN (MESH:C513700), SnS (MESH:D014001), Ta (MESH:D013635), silicon carbide (MESH:C022088), halogen (MESH:D006219), Al (MESH:D000535), fluorine (MESH:D005461), soda-lime (MESH:C004569), Ag (MESH:D012834), BiVO4 (MESH:C091754), methanol (MESH:D000432), Pt (MESH:D010984), TiO2@SiO2 (MESH:C507641), Ag2S (MESH:C013251), Ga (MESH:D005708), ZnO (MESH:D015034), CuO (MESH:C030973), ITO (MESH:C109984), ZnPc (MESH:C052159), carbon monoxide (MESH:D002248), Au (MESH:D006046), TiO2 (MESH:C009495), PEDOT:PSS (MESH:C533756), Cs+ (MESH:D002586), CdCl2 (MESH:D019256), quartz (MESH:D011791)
- **Species:** Homo sapiens (human, species) [taxon 9606]

## Full text

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## Figures

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## References

254 references — full list in the complete paper: https://tomesphere.com/paper/PMC12566347/full.md

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Source: https://tomesphere.com/paper/PMC12566347