# Comparison of Quantum Transition Characteristics of Group II–VI (ZnO), Group III–V (GaN) Compound Semiconductors, and Intrinsic (Si) Semiconductors in Response to Externally Applied Energy

## TL;DR

This paper compares how different types of semiconductors respond to energy applied in different polarization directions, focusing on their quantum transition behaviors.

## Contribution

The study introduces a comparative analysis of quantum transition characteristics in different semiconductor bonding types under polarized energy.

## Key findings

- Left circular polarization increases absorbed power and scattering coefficient under magnetic fields.
- Si semiconductors show the highest absorbed power and scattering coefficient, followed by GaN and ZnO.
- Quantum transitions are sensitive to temperature and magnetic field variations.

## Abstract

In this paper, we study the line-shape (LS), which indicates the amount of absorbed energy, and the line-width (LW), which indicates the scattering factor, according to the vibrational direction of the externally applied energy in the electron–phonon potential interaction system of representative semiconductor bonding types, group II–VI (ZnO) and group III–V (GaN) bonded compound semiconductors and pure group IV (Si) bonded semiconductors. One of the two systems receives the externally applied energy of right-handed circular polarization vibration, and the other receives the externally applied energy of left-handed circular polarization vibration. To analyze the quantum transport, we first employ quantum transport theory (QTR) for an electron system confined within a square-well potential, where the projected Liouville equation is addressed using the balanced-average projection method. In analyzing quantum transitions, phonon emission is linked to the transition line-width (LW), whereas phonon absorption is evaluated through the transition line-shape (LS), highlighting its sensitivity to temperature and magnetic field variations. As a result of analyzing the line-width (LW), which is a quantum scattering coefficient, and the line-shape (LS), which represents the absorbed power, the absorbed power and scattering coefficient were higher for the left circularly polarized vibration under the influence of the external magnetic field. In contrast, the right polarization produced smaller values. In addition, the scattering coefficient (LW) and the absorbed power according to the bonding type of the semiconductor were the largest in Si, a group IV bonded semiconductor, followed by group III–V (GaN) and group II–VI (ZnO) bonded semiconductors.