# Preparation and Performance Exploration of MoS2/WSe2 Van Der Waals Heterojunction Tunneling Field-Effect Transistor

## TL;DR

This paper explores a new type of low-power transistor made from layered materials that could be used in flexible electronics.

## Contribution

The study fabricates and analyzes a MoS2/WSe2 van der Waals heterojunction tunneling field-effect transistor with a high current switching ratio.

## Key findings

- MoS2 shows N-type behavior while WSe2 shows P-type behavior in fabricated FETs.
- The MoS2/WSe2 heterojunction TFET achieves a drain current switching ratio of 105.
- The device demonstrates potential for low-power flexible semiconductor applications.

## Abstract

Due to their high carrier mobility, thermal conductivity, and exceptional foldability, transition metal dichalcogenides (TMDs) present promising prospects in the realm of flexible semiconductor devices. Concurrently, tunneling field-effect transistors (TFETs) have garnered significant attention owing to their low energy consumption. This study investigates a TMD van der Waals heterojunction (VdWH) TFET, specifically by fabricating MoS2 field-effect transistors (FETs), WSe2 FETs, and MoS2/WSe2 VdWH TFETs. The N-type characteristics of the MoS2 and P-type characteristics of WSe2 are established through an analysis of the electrical characteristics of the respective FETs. Finally, we analyze the energy band and electrical characteristics of the MoS2/WSe2 VdWH TFET, which exhibits a drain current switching ratio of 105. This study provides valuable insights for the development of novel low-power devices.