Bilayer TMDs for Future FETs: Carrier Dynamics and Device Implications
Shoaib Mansoori, Edward Chen, Massimo Fischetti
TL;DR
This paper studies bilayer TMDs for future transistors, showing how material properties and dielectrics affect performance.
Contribution
The study introduces a detailed analysis of carrier dynamics in bilayer TMDs using DFT and Monte Carlo simulations.
Findings
Freestanding bilayer WS2 and WSe2 show high hole mobilities of 2300 and 1300 cm²/V·s, respectively.
Using hBN as a dielectric improves or maintains mobility, while HfO2 reduces it due to increased scattering.
Optimized WSe2 pFETs achieve ON currents of 820 A/m with a 10% improvement using hBN.
Abstract
Bilayer transition metal dichalcogenides (TMDs) are promising materials for next-generation field-effect transistors (FETs) due to their atomically thin structure and favorable transport properties. In this study, we employ density functional theory (DFT) to compute the electronic band structures and phonon dispersions of bilayer WS2, WSe2, and MoS2, and the electron-phonon scattering rates using the EPW (electron-phonon Wannier) method. Carrier transport is then investigated within a semiclassical full-band Monte Carlo framework, explicitly including intrinsic electron-phonon scattering, dielectric screening, scattering with hybrid plasmon–phonon interface excitations (IPPs), and scattering with ionized impurities. Freestanding bilayers exhibit the highest mobilities, with hole mobilities reaching 2300 cm2/V·s in WS2 and 1300 cm2/V·s in WSe2. Using hBN as the top gate dielectric…
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Taxonomy
Topics2D Materials and Applications · Graphene research and applications · Molecular Junctions and Nanostructures