# Integration of Er3+ Emitters in Silicon-on-Insulator Nanodisk Metasurface

## TL;DR

This paper explores integrating erbium emitters into silicon-based nanodisks to enhance optical emission for telecom and quantum applications.

## Contribution

The novel integration of Er3+ emitters in SOI nanodisk metasurfaces enables scalable and CMOS-compatible control of spontaneous emission.

## Key findings

- CMOS-compatible metasurfaces improve the collection efficiency of Er3+ spontaneous emission in SOI.
- Spontaneous emission was studied at room and cryogenic temperatures using confocal microscopy and photoluminescence techniques.
- The results suggest applicability in advanced materials for quantum and telecom technologies.

## Abstract

Erbium (Er3+) emitters are relevant for optical applications due to their narrow emission line directly in the telecom C-band due to the 4I13/2 → 4I15/2 transition at 1.54 μm. Additionally, they are promising candidates for future quantum technologies when embedded in thin film silicon-on-insulator (SOI) to achieve fabrication scalability and CMOS compatibility. In this paper we integrate Er3+ emitters in SOI metasurfaces made of closely spaced arrays of nanodisks, to study their spontaneous emission via room and cryogenic temperature confocal microscopy, off-resonance and in-resonance photoluminescence excitation at room temperature and time-resolved spectroscopy. This work demonstrates the possibility to adopt CMOS-compatible and fabrication-scalable metasurfaces for controlling and improving the collection efficiency of the spontaneous emission from the Er3+ transition in SOI and that they could be adopted in similar technologically advanced materials.